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905nm Pulsed Laser Diodes


Single emitters, stacks and multi-junction pulsed laser diodes up to 650 W
Low cost version
AEC-Qxx qualification
SMD package
Application Range finding
Speed monitoring
Laser radars
Security scanners and laser light curtains
Testing and measurement systems
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Product Info





Pulsed Laser Diodes

LASER COMPONENTS Canada produces high power pulsed laser diodes (PLDs) at 905 nm. The AlGaAs structure of the 905 series allows for high reliability and temperature stability; it also achieves the best beam characteristics. These 905 nm PLDs are available in a TO-18, 5.6 mm, 9 mm, or 8-32 Coax housing as well as a chip on a ceramic submount. Customer-specific designs and other wavelengths are available upon request.

These laser diodes are used in range finding, speed monitoring, laser radars, security scanners, and laser light curtains or in testing and measurement systems.


The 905D series pulsed laser diodes are available as single elements or stacks with a peak power up to 650 W. At an efficiency of 1 W/A, the single elements achieve a peak power of 34 W, whereas the stack designs achieve an output of up to 650 W at a pulse length of 150 ns and a duty cycle of 0.1%.

Multi-junction pulsed laser diodes are similar to nanostack technology. LASER COMPONENTS’ PLDs exhibit a peak power of up to 70 W at a pulse length of 150 ns from a single chip and are thus quite impressive.

The 70 W diode is based on three epitaxially integrated emitters with an active area of altogether only 235 x 10 µm. Other versions deliver an output power of 25 W from an active area of 85 x 10 µm and 50 W from 160 x 10 µm. The small area allows the laser power to be coupled easily into a fiber and combined with microoptics.

A hermetically sealed TO housing ensures high reliability, an excellent overdrive capability, and a very precise chip alignment inside the TO can.

Stacked multi-junction pulsed laser diodes deliver a peak power up to 650 W at 905 nm. They are based on several epitaxially integrated emitters with a total emitting area of 200 µm x 10 µm and thus deliver an optimal power intensity. Depending on the number of integrated chips, a peak power of up to 650 W can be achieved. They deliver optimal power intensity and are suited in particular for medical applications and the coupling of optical fibers.

Characteristics of single emitters

  • Pulse length: 150 ns
  • Peak power: at least 70 W

Characteristics of stacked versions:

  • Pulse length: 150 ns
  • Peak power: up to 650 W

Application fields include: medical technology, ceilometers, altimeters, LIDAR, distance measurements

UA series pulsed laser diodes are high quality diodes hermetically sealed in a TO-56 metal housing. Produced in large quantities, they can compete in price with PLDs in a plastic housing. In addition, they are highly reliable, possess excellent overdrive capabilities, and feature optimal thermal stability and a very precise chip alignment inside the housing.

As a single element design, the 905DxxUA series achieves a peak power of 6 W to 19 W. The multi-junction versions deliver a peak power of 25 W, 50 W, and 75 W at 150 ns and a duty cycle of 0.1%.

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