- 레이저다이오드 | Laser Diode > LD (CHIP, TO, BAR)
Product |
808nm 120W Diode laser Vertical stacks -. AuSn solder for packaging -. High conversion efficiency -. High peak power -. High reliability |
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Application |
-. Illumination -. Pumping source -. Scientific research |
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Product Info
Product Parameters
Optical Parameters | |
Part Number | R808±10-Q480-GS11-10*4 |
Center Wavelength λc(nm) | 808 |
Wavelength Tolerance δλc(nm) | ±10 |
Output power of each Bar(W) | 120 |
Bar Numbers | 4 |
Spaces between Bars(mm) | 1.65 |
Spectral Width(FWHM)(nm) | <5 |
Slope Efficiency of each Bar (W/A) | >1.1 |
Fast Axis Divergence Angle(FWHM)(°) | 40 |
Slow Axis Divergence Angle(FWHM)(°) | 10 |
Temperature Drift of Wavelength(nm/℃) | ~0.3 |
Electrical Parameters | |
Conversion Efficiency(%) | >50 |
Threshold Current Ith(A) | <15 |
Operating Current Iop(A) | <130 |
Operating Voltage Vop of each Bar(V) | <2 |
Duty Cycle(%) | <2 |
Pulse Width(μs) | <3000 |
Repetition Rate(Hz) | <100 |
Environment Parameters | |
Operating Temperature(℃) | 20~35 |
Storage Temperature(℃) | 0~55 |