- 레이저다이오드 | Laser Diode > LD (CHIP, TO, BAR)
| Product |
808nm 80 W Diode laser Vertical stacks -. AuSn solder for packaging -. Compact design -. High peak power density -. High reliability |
|
| Application |
-. Pumping source -. Scientific research |
|
| Download | ||
Product Info
Product Parameters
| Optical Parameters | ||
| Part Number | R808±3-Q640-GS04-3*8 | R808±3-Q1200-GS04-5*12 |
| Center Wavelength λc（nm） | 808 | |
| Wavelength Tolerance δλc（nm） | ±3 | |
| Output power of each Bar（W） | 80 | 100 |
| Bar Numbers | 8 | 12 |
| Spaces between Bars（mm） | ~0.4 | |
| Spectral Width（FWHM）（nm） | <5 | |
| Slope Efficiency of each Bar (W/A) | >1.0 | |
| Fast Axis Divergence Angle（FWHM）（°） | 40 | |
| Slow Axis Divergence Angle（FWHM）（°） | 10 | |
| Temperature Drift of Wavelength（nm/℃） | ~0.3 | |
| Electrical Parameters | ||
| Conversion Efficiency（%） | >48 | |
| Threshold Current Ith（A） | <12 | <17 |
| Operating Current Iop（A） | <85 | <130 |
| Operating Voltage Vop of each Bar（V） | <2 | |
| Duty Cycle（%） | <0.8 | |
| Pulse Width（μs） | <300 | |
| Repetition Rate（Hz） | <30 | |
| Environment Parameters | ||
| Operating Temperature（℃） | 0~45 | |
| Storage Temperature（℃） | 0~55 | |
